MODULATED DEPOSITION PROCESS FOR STRESS CONTROL IN THICK TiN FILMS

ABSTRACT

A multi-layer TiN film with reduced tensile stress and discontinuous grain structure, and a method of fabricating the TiN film are disclosed. The TiN layers are formed by PVD or IMP in a nitrogen plasma. Tensile stress in a center layer of the film is reduced by increasing N 2  gas flow to the nitrogen plasma, resulting in a Ti:N stoichiometry between 1:2.1 to 1:2.3. TiN films thicker than 40 nanometers without cracks are attained by the disclosed process.

FIELD OF THE INVENTION

This invention relates to the field of integrated circuits. Moreparticularly, this invention relates to improved titanium nitride filmsin integrated circuits.

BACKGROUND OF THE INVENTION

Titanium nitride (TiN) films are used in integrated circuits (ICs) for avariety of purposes, including capacitor plates and metal interconnectliners. TiN films exhibit low electrical resistivity and good adhesionto dielectric materials commonly used in ICs, and provide good diffusionbarriers to metals commonly used in ICs, such as aluminum and copper.TiN has high tensile stress that can cause cracks in films thicker than40 nanometers.

SUMMARY OF THE INVENTION

This Summary is provided to comply with 37 C.F.R. §1.73, requiring asummary of the invention briefly indicating the nature and substance ofthe invention. It is submitted with the understanding that it will notbe used to interpret or limit the scope or meaning of the claims.

The instant invention provides a method of forming a TiN film of threeor more layers, in which one or more central layers has lower tensilestress than outer layers and a discontinuous grain structure from theouter layers.

DESCRIPTION OF THE VIEWS OF THE DRAWING

FIG. 1A through FIG. 1C are cross-sectional views of successive stagesof formation of a multi-layer TiN film formed according to an embodimentof the instant invention.

DETAILED DESCRIPTION

The present invention is described with reference to the attachedfigures, wherein like reference numerals are used throughout the figuresto designate similar or equivalent elements. The figures are not drawnto scale and they are provided merely to illustrate the invention.Several aspects of the invention are described below with reference toexample applications for illustration. It should be understood thatnumerous specific details, relationships, and methods are set forth toprovide a full understanding of the invention. One skilled in therelevant art, however, will readily recognize that the invention can bepracticed without one or more of the specific details or with othermethods. In other instances, well-known structures or operations are notshown in detail to avoid obscuring the invention. The present inventionis not limited by the illustrated ordering of acts or events, as someacts may occur in different orders and/or concurrently with other actsor events. Furthermore, not all illustrated acts or events are requiredto implement a methodology in accordance with the present invention.

The need for a titanium nitride (TiN) film in an integrated circuit (IC)thicker than 40 nanometers that is resistant to cracking whilemaintaining good adhesion to dielectric materials, low electricalresistivity and good diffusion barrier properties, is addressed by theinstant invention, which provides a method of forming a multi-layer TiNfilm of three or more layers, in which one or more central layers haslower tensile stress than outer layers and a discontinuous grainstructure from the outer layers. All layers of the inventive film may beformed in a common reaction chamber.

A multi-layer TiN film having the properties recited above may be formedfor example as depicted in FIG. 1A through FIG. 1C, which arecross-sectional views of successive stages of formation of a multi-layerTiN film. Referring to FIG. 1A, a first TiN layer (122) of themulti-layer TiN film is formed on an IC substrate (100), typically asilicon wafer, but possibly a wafer of another semiconductor material,or any other substrate suitable for fabricating ICs. The first TiN layer(122) exhibits an adhesion to the top surface of the substrate (100)within a desired range of adhesion values and an electrical resistivitywithin a desired range of electrical resistivity values. Astoichiometry, Ti:N, of the first TiN layer (122) is between 1:1.05 and1:1.15. A preferred thickness of the first TiN layer (122) is between 5and 10 nanometers.

The first TiN layer (122) may, for example, be formed by placing the ICsubstrate (100) on a substrate platen (102) in a deposition chamber(104), which may be part of a processing tool with more than onechamber. The substrate platen (102) maintains a temperature of thesubstrate (100) between 30 C and 300 C during a deposition process. Anentry port (106) in the deposition chamber (104) admits N₂ gas into aninterior region (108) of the deposition chamber (104). A first flow rateof N₂ gas, between 30 and 150 sccm, into the interior region (108) iscontrolled by a gas flow controller (110). An exit port (112) in thedeposition chamber (104) is connected to an exhaust system, not shown inFIG. 1A for clarity, which may include a pump, to remove gas from theinterior region (108). A first pressure level of gas in the interiorregion (108), between 0.5 and 5 millitorr, is obtained by a combinationof the first flow rate of N₂ gas into the deposition chamber (104), afirst flow impedance of the exit port (110) and a pressure drop at theexit port (112) provided by the exhaust system. A titanium target (114)is mounted in the interior region (108) above the substrate platen(102). An RF power supply (116), with DC bias capability, is connectedto the titanium target (114) and the substrate platen (102). A firstlevel of RF power, between 0.5 and 1.5 watts/cm², is applied to N₂ gasin the interior region (108) by the RF power supply (116), forming afirst plasma (118) in the interior region (108) between the titaniumtarget (114) and the substrate (100). A first set of titanium atoms(120) is dislodged from the titanium target (114) by the first plasma(118) and travels to the substrate (100), where the titanium atoms reactwith nitrogen atoms from the N₂ gas provided by the gas flow controller(110) to form a first TiN layer (122) at a rate between 0.5 and 3nanometers/second on a top surface of the substrate (100), in a processcommonly known as physical vapor deposition (PVD). The first N₂ gas flowrate into the deposition chamber (104), the first pressure level in theinterior region (108) of the deposition chamber (104), the temperatureof the substrate (100), the first level of RF power applied by the RFpower supply (116) and a first DC bias of the RF power supply (116) areadjusted such that the first TiN layer (122) exhibits an adhesion to thetop surface of the substrate (100) within a desired range of adhesionvalues and an electrical resistivity within a desired range ofelectrical resistivity values. As discussed above, the stoichiometry,Ti:N, of the first TiN layer (122) is between 1:1.05 and 1:1.15 and thepreferred thickness of the first TiN layer (122) is between 5 and 10nanometers.

Referring to FIG. 1B, a second TiN layer (128) of the multi-layer TiNfilm is formed on the first TiN layer (122). The second TiN layer (128)exhibits a level of tensile stress 25 to 50 percent less than the firstTiN layer (122). Grains of the second TiN layer (128) are discontinuousfrom grains of the first TiN layer (122), which is advantageous becausea discontinuous grain structure increases resistance to diffusion ofmetal atoms such as copper and aluminum through the inventive TiN film.A stoichiometry of the second TiN layer (128) is between 1:2.1 and1:2.3.. A preferred thickness of the second TiN layer (122) is greaterthan 20 nanometers.

The second TiN layer (128) may, for example, be formed using thefollowing process. FIG. 1B depicts the substrate (100) in the samedeposition chamber (104) used to form the first TiN layer (122), but itis within the scope of the instant embodiment to form the second TiNlayer of the multi-layer TiN film in a separate deposition chamber. Asecond N₂ gas flow rate between 10 and 25 percent higher than the firstN₂ gas flow rate is provided by the gas flow controller (110). A secondpressure level of gas in the interior region (108) of the depositionchamber (104) is established to be substantially the same as the firstpressure level of gas, possibly by adjusting a flow impedance of theexit port (112). A second level of RF power provided by the RF powersupply (116) is established to be substantially the same as the firstlevel of RF power, and a second DC bias is established to besubstantially the same as the first DC bias, forming a second plasma(124) in the interior region (108) between the titanium target (114) andthe substrate (100). A second set of titanium atoms (126) is dislodgedfrom the titanium target (114) by the second plasma (124) and travels tothe substrate (100), where the titanium atoms react with nitrogen atomsfrom the N₂ gas provided by the gas flow controller (110) to form asecond TiN layer (128) on a top surface of the first TiN layer (122).The second N₂ gas flow rate into the deposition chamber (104), thesecond pressure level in the interior region (108) of the depositionchamber (104), the temperature of the substrate (100), the second levelof RF power applied by the RF power supply (116) and the second DC biasof the RF power supply (116) are adjusted such that the second TiN layer(128) exhibits a level of tensile stress 25 to 50 percent less than thefirst TiN layer (122). As discussed above, grains of the second TiNlayer (128) are discontinuous for grains of the first TiN layer (122),which is advantageous because a discontinuous grain structure increasesresistance to diffusion of metal atoms such as copper and aluminumthrough the inventive TiN film, the stoichiometry of the second TiNlayer (128) is between 1:2.1 and 1:2.3, and the preferred thickness ofthe second TiN layer (122) is greater than 20 nanometers.

Referring to FIG. 1C, a third TiN layer (134) of the multi-layer TiNfilm is formed on the second TiN layer (128). The third TiN layer (134)exhibits an adhesion to a subsequent layer to be formed on a top surfaceof the inventive TiN film within a desired range of adhesion values andan electrical resistivity within a desired range of electricalresistivity values. Grains of the third TiN layer (134) arediscontinuous for grains of the second TiN layer (128), which is alsoadvantageous because a second level of grain structure discontinuityfurther increases resistance to diffusion of metal atoms such as copperand aluminum through the inventive TiN film. A stoichiometry of thethird TiN layer (134) is between 1:1.05 and 1:1.15. A preferredthickness of the third TiN layer (134) is between 5 and 10 nanometers.

The third TiN layer (134) may, for example, be formed using thefollowing process. FIG. 1C depicts the substrate (100) in the samedeposition chamber (104) used to form the first TiN layer (122) and thesecond TiN layer (128), but it is within the scope of the instantembodiment to form the third TiN layer of the multi-layer TiN film in aseparate deposition chamber. A third N₂ gas flow rate is provided by thegas flow controller (110) which is substantially the same as the firstN₂ gas flow rate. A third pressure level of gas in the interior region(108) of the deposition chamber (104) is established, possibly byreadjusting a flow impedance of the exit port (112), to be substantiallythe same as the first pressure level of gas. A third level of RF powerand a third DC bias provided by the RF power supply (116) areestablished to be substantially the same as the first level of RF powerand the first DC bias, respectively, forming a third plasma (130) in theinterior region (108) between the titanium target (114) and thesubstrate (100). A third set of titanium atoms (132) is dislodged fromthe titanium target (114) by the third plasma (130) and travels to thesubstrate (100), where the titanium atoms react with nitrogen atoms fromthe N₂ gas provided by the gas flow controller (110) to form a third TiNlayer (134) on a top surface of the second TiN layer (128). The third N₂gas flow rate into the deposition chamber (104), the third pressurelevel in the interior region (108) of the deposition chamber (104), thetemperature of the substrate (100), the third level of RF power appliedby the RF power supply (116) and the third DC bias of the RF powersupply (116) are adjusted such that the third TiN layer (134) exhibitsan adhesion to a subsequent layer to be formed on a top surface of theinventive TiN film within a desired range of adhesion values and anelectrical resistivity within a desired range of electrical resistivityvalues. As discussed above, grains of the third TiN layer (134) arediscontinuous for grains of the second TiN layer (128), which is alsoadvantageous because a second level of grain structure discontinuityfurther increases resistance to diffusion of metal atoms such as copperand aluminum through the inventive TiN film. As discussed above, thestoichiometry of the third TiN layer (134) is between 1:1.05 and 1:1.15,and the preferred thickness of the third TiN layer (134) is between 5and 10 nanometers.

An alternate process for dislodging the first, second and third sets oftitanium atoms from the titanium target and reacting the titanium atomswith nitrogen atoms from the N₂ gas is commonly known as ionized metalplasma (IMP) deposition, and is performed at pressures between 30 and 90millitorr.

It is within the scope of the instant invention to form more than oneTiN layer with reduced tensile stress between formation of the first TiNlayer and formation of the last TiN layer.

It is within the scope of the instant invention to form one or morelayers of the inventive TiN film in separate deposition chambers.

1. A method of forming a titanium nitride (TiN) film on a substrate,comprising the steps of: forming a first TiN layer with a first grainstructure on a top surface of said substrate; forming a second TiN layerwith a second grain structure and with less tensile stress than saidfirst TiN layer on a top surface of said first TiN layer; forming athird TiN layer with a third grain structure on a top surface of saidsecond TiN layer.
 2. The method of claim 1, in which: a Ti:Nstoichiometry of said first TiN layer is between 1:1.05 and 1:1.15; aTi:N stoichiometry of said second TiN layer is between 1:2.1 and 1:2.3;and a Ti:N stoichiometry of said third TiN layer is between 1:1.05 and1:1.15.
 3. The method of claim 2, in which: said first TiN layer isbetween 5 and 10 nanometers thick; said second TiN layer is greater than20 nanometers thick; and said third TiN layer is between 5 and 10nanometers thick;
 4. The method of claim 3, in which said second TiNlayer has between 25 and 50 percent less tensile stress than said firstTiN layer.
 5. The method of claim 4, in which said first TiN layer, saidsecond TiN layer, and said third TiN layer are formed in a singledeposition chamber.
 6. The method of claim 5, in which: said step offorming said first TiN layer further comprises the steps of: flowing afirst quantity of N₂ gas into said deposition chamber at a flow ratebetween 30 and 150 sccm; maintaining a first pressure in said depositionchamber between 0.5 and 5 millitorr; forming a first plasma in saidfirst quantity of N₂ gas by providing between 0.5 and 1.5 watts/cm² ofRF power to said first quantity of N₂ gas; and depositing said first TiNlayer at a rate between 0.5 and 3 nanometers/second; said step offorming said second TiN layer further comprises the steps of: flowing asecond quantity of N₂ gas into said deposition chamber at a flow ratebetween 10 and 25 percent higher than said first quantity of N₂ gas;maintaining a second pressure in said deposition chamber between 0.5 and5 millitorr; forming a second plasma in said second quantity of N₂ gasby providing between 0.5 and 1.5 watts/cm² of RF power to said secondquantity of N₂ gas; and depositing said second TiN layer at a ratebetween 0.5 and 3 nanometers/second; and said step of forming said thirdTiN layer further comprises the steps of: flowing a third quantity of N₂gas into said deposition chamber at a flow rate between 30 and 150 sccm;maintaining a third pressure in said deposition chamber between 0.5 and5 millitorr; forming a third plasma in said third quantity of N₂ gas byproviding between 0.5 and 1.5 watts/cm² of RF power to said thirdquantity of N₂ gas; and depositing said third TiN layer at a ratebetween 0.5 and 3 nanometers/second.
 7. The method of claim 6, furthercomprising the step of forming a fourth TiN layer with a fourth grainstructure and with less tensile stress than said first TiN layer on atop surface of said second TiN layer, before said step of forming saidthird TiN layer, and in which said third TiN layer is formed on a topsurface of said fourth TiN layer.
 8. An integrated circuit (IC),comprising: a semiconductor substrate; and a multi-layer TiN film,including: a first TiN layer with a first grain structure formed on atop surface of said semiconductor substrate; a second TiN layer with asecond grain structure and with less tensile stress than said first TiNlayer formed on a top surface of said first TiN layer; and a third TiNlayer with a third grain structure formed on a top surface of saidsecond TiN layer.
 9. The IC of claim 8, in which: a Ti:N stoichiometryof said first TiN layer is between 1:1.05 and 1:1.15; a Ti:Nstoichiometry of said second TiN layer is between 1:2.1 and 1:2.3; and aTi:N stoichiometry of said third TiN layer is between 1:1.05 and 1:1.15.10. The IC of claim 9, in which: said first TiN layer is between 5 and10 nanometers thick; said second TiN layer is greater than 20 nanometersthick; and said third TiN layer is between 5 and 10 nanometers thick;11. The IC of claim 10, in which said second TiN layer has between 25and 50 percent less tensile stress than said first TiN layer.
 12. The ICof claim 11, further comprising a fourth TiN layer with a fourth grainstructure and with less tensile stress than said first TiN layer formedon a top surface of said second TiN layer, and in which said third TiNlayer is formed on a top surface of said fourth TiN layer.
 13. A methodof forming an IC, comprising the steps of: providing a semiconductorsubstrate; forming a TiN film greater than 40 nanometers thick by aprocess further comprising the steps of: forming a first TiN layer witha first grain structure on a top surface of said semiconductorsubstrate; forming a second TiN layer with a second grain structure andwith less tensile stress than said first TiN layer on a top surface ofsaid first TiN layer; forming a third TiN layer with a third grainstructure on a top surface of said second TiN layer.
 14. The method ofclaim 13, in which: a Ti:N stoichiometry of said first TiN layer isbetween 1:1.05 and 1:1.15; a Ti:N stoichiometry of said second TiN layeris between 1:2.1 and 1:2.3; and a Ti:N stoichiometry of said third TiNlayer is between 1:1.05 and 1:1.15.
 15. The method of claim 14, inwhich: said first TiN layer is between 5 and 10 nanometers thick; saidsecond TiN layer is greater than 20 nanometers thick; and said third TiNlayer is between 5 and 10 nanometers thick;
 16. The method of claim 15,in which said second TiN layer has between 25 and 50 percent lesstensile stress than said first TiN layer.
 17. The method of claim 16, inwhich said first TiN layer, said second TiN layer, and said third TiNlayer are formed in a single deposition chamber.
 18. The method of claim17, in which: said step of forming said first TiN layer furthercomprises the steps of: flowing a first quantity of N₂ gas into saiddeposition chamber at a flow rate between 30 and 150 sccm; maintaining afirst pressure in said deposition chamber between 0.5 and 5 millitorr;forming a first plasma in said first quantity of N₂ gas by providingbetween 0.5 and 1.5 watts/cm² of RF power to said first quantity of N₂gas; and depositing said first TiN layer at a rate between 0.5 and 3nanometers/second; said step of forming said second TiN layer furthercomprises the steps of: flowing a second quantity of N₂ gas into saiddeposition chamber at a flow rate between 10 and 25 percent higher thansaid first quantity of N₂ gas; maintaining a second pressure in saiddeposition chamber between 0.5 and 5 millitorr; forming a second plasmain said second quantity of N₂ gas by providing between 0.5 and 1.5watts/cm² of RF power to said second quantity of N₂ gas; and depositingsaid second TiN layer at a rate between 0.5 and 3 nanometers/second; andsaid step of forming said third TiN layer further comprises the stepsof: flowing a third quantity of N₂ gas into said deposition chamber at aflow rate between 30 and 150 sccm; maintaining a third pressure in saiddeposition chamber between 0.5 and 5 millitorr; forming a third plasmain said third quantity of N₂ gas by providing between 0.5 and 1.5watts/cm² of RF power to said third quantity of N₂ gas; and depositingsaid third TiN layer at a rate between 0.5 and 3 nanometers/second. 19.The method of claim 18, further comprising the step of forming a fourthTiN layer with a fourth grain structure and with less tensile stressthan said first TiN layer on a top surface of said second TiN layer,before said step of forming said third TiN layer, and in which saidthird TiN layer is formed on a top surface of said fourth TiN layer.